Recent listings manufacturer directory get instant insight into any electronic component. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a. Application switching packaging specifications inner circuit package taping code tb basic ordering unit pieces 2500 rxh100n03. Spp21n50c3 spi21n50c3, spa21n50c3 cool mos power transistor. Npn rf transistor 2n5770 absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. En2471a npn triple diffused planar silicon transistor 2sc4106 400v7a switching regulator applications features package dimensions high breakdown voltage and high reliability. Elektronische bauelemente npn plastic encapsulated transistor 14feb2011 rev. C4106 transistor c3457 b824 transistor c4106 semiconductor transistor c4106 transistor c3447 transistor d1061 d1060 d1061. Sep 30, 2015 c4106 datasheet pdf, c4106 datasheet, c4106 pdf, c4106 pinout, c4106 data, c4106 circuit, ic, c4106 manual, substitute, parts, schematic, reference. Silicon npn epitaxial planar transistor complement to type 2sa1216 application. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. They are graphically shown on figure 1 along with the device schematic and relevant parameters. Try findchips pro for 2sa1930 transistor equivalent. Tip31c transistor pinout, configuration, equivalent, circuit.
Here we are going to use tip31c in common emitter configuration to understand its working. The humble transistor q1 emitter e collector c base b transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so. Mar 17, 2018 tip31c can be used like any other power transistor. So your transistor will actually say something like, 2sc828aq, 2sc828ar or 2sc828as, being 3 variants of 2sc828a. Emitter open 2sc18 60 collectoremitter voltage 2sc17 v ceo 25 v base open 2sc18 50 emitterbase voltage collector open v ebo 7v collector current i c 0. Offers a lineup of compound products combining two elements with the downsizing of the packages attained, thus contributing to the highdensity mounting of the packages. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in. Transistor wall clock kit page 3 introduction thanks for buying this kit. Sep 18, 2019 c3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic. Transistor uses, transistor rules, common emitter circuit, small signal amplification, fieldeffect transistors, jfet operating regions. Posted on february 22, 2016 september 18, 2019 by pinout. Savantic semiconductor product specification 2 silicon npn power transistors 2sc4242 characteristics tj25 unless otherwise specified symbol parameter conditions min typ. The uln2003b device is a highvoltage, highcurrent darlington transistor array.
C4106 datasheet, c4106 pdf, c4106 data sheet, c4106 manual, c4106 pdf, c4106, datenblatt, electronics c4106, alldatasheet, free, datasheet, datasheets, data sheet. Each consists of esd protection exceeds 200 v using machine seven npn darlington pairs that feature highvoltage. Ulq200xaq1 highvoltage highcurrent darlington transistor. Tip31c transistor pinout, configuration, equivalent. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a complementary pair with 2sa0885. C3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic.
Free packages are available maximum ratings rating symbol value unit collector. Confirm the latest device specification sheets before using any sharp device. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. K4106 2sk4106 components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Specification mentioned in this publication are subject to change without notice. Tip31c can be used like any other power transistor. Savantic semiconductor product specification silicon npn power transistors 2sc4242 description with to220c package high voltage,high speed applications for use in high voltage,high speed.
Savantic semiconductor product specification silicon npn power transistors 2sc1096 description with to202 package low breakdown voltage high current high ft applications for audio frequency power amplifier and low speed switching applications. The suffix your transistor has determines which hfe gain it will have, as concluded from the datasheet. Power transistors datasheet, power transistors pdf, power transistors data sheet, datasheet, data sheet, pdf. On special request, these transistors can be manufactured in different pin configurations.
The device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. Date published march 2006 cpk description the ps27061 is an optically coupled isolator containing a gaas light emitting diode and an npn silicon darlington. Elektronische bauelemente npn plastic encapsulated. The top countries of supplier is china, from which the percentage of c828 transistor supply is 100% respectively. Bc556b, bc557a, b, c, bc558b amplifier transistors on. Ulq200xaq1 highvoltage highcurrent darlington transistor arrays 1 features 3 description the ulq200xaq1 devices are highvoltage high1 qualified for automotive applications current darlington transistor arrays. Bipolar transistor 100v, 2a, low vcesat pnp single pcp stresses exceeding maximum ratings may damage the device. Power transistor datasheet, power transistor pdf, power transistor data sheet, datasheet, data sheet, pdf. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. We have the broadest line of bipolar power transistors in the industry and the motorola commitment to quality and total customer satisfaction to go with them.
Elektronische bauelemente npn plastic encapsulated transistor. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Id 21 a feature new revolutionary high voltage technology worldwide best rdson in to 220 ultra low gate charge periodic avalanche rated extreme dvdt rated ultra low effective capacitances improved transconductance. Uln2003b highvoltage, highcurrent darlington transistor. Utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or other. This datasheet contains preliminary data, and supplementary data will be published at a later date. After 1015 hours of assembly, and with a clock to show for your efforts, i hope you will thank me for offering this kit. Sanyo switching regulator applications,alldatasheet, datasheet, datasheet search site for. Transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so kcl should be applied first. Mos fet realizes low onstate resistance with even compact packages. Recent listings manufacturer directory get instant.
Npn triple diffused planar silicon transistor 400v7a switching regulator applications ordering number. Bc846 series 65 v, 100 ma npn generalpurpose transistors. These transistors are subdivided into three groups q, r and s according to their dc current gain. Jun 15, 2018 the 2n5306 transistor is very much similar to the commonly used npn transistors, but it is way more powerful than those since it is a darlington transistor. Semiconductor documents see the following documents to obtain information on sharp devices. C4106 datasheet pdf, c4106 datasheet, c4106 pdf, c4106 pinout, c4106 data, c4106 circuit, ic, c4106 manual, substitute, parts, schematic, reference. This device consists of seven npn darlington pairs that feature highvoltage outputs with commoncathode clamp diodes for switching inductive loads.
A wide variety of c828 transistor options are available to you, there are 62 suppliers who sells c828 transistor on, mainly located in asia. Power transistor specification list 2n3055 npn 60v 14a 20 to 70 155w 2n6036 pnp, darlington 80v 4a 750 to 15000 40w 2n6039 npn, darlington 80v 4a 750 to 15000 40w 2n6109 pnp 50v 7a 30 to 150 40w bd9 npn 80v 1. Smallsignal device smallsignal transistor highfrequency amplifiers and others 2 select the part name and then you can download the datasheet in pdf format. This explains your question with the qrs part of the hfe shown in your datasheet. Sanyo switching regulator applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. C3150 datasheet pdf 800v, npn power transistor mospec. Functional operation above the recommended operating conditions is not implied. Bc546b, bc547a, b, c, bc548b, c amplifier transistors arduino. The collectorcurrent rating of a single darlington pair is 500 ma. Normal transistor have a current gain for around 100300 but our darlington transistor has a gain of 20000 hence it can be easily used in amplifier applications. C4106 datasheet, cross reference, circuit and application notes in pdf format. This publication supersedes and replaces all information previously supplied.